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| CM3131 Triple Linear Voltage Regulator for DDR-I/-II Memory Features * * * * * Integrated power solution for DDR-I and DDR-II memory systems with few external components Three all-linear regulators for VDDQ, VTT and VSTBY power supply applications Lowest system cost and smallest footprint for DDR power solutions VDDQ regulator/driver utilizes external N-FET to provide up to 15A current at 2.5V/1.8V VTT source/sink regulator provides up to 2A at 1.25V for DDR-I systems or 0.65A at 0.9V for the DDR-II memory controller (not DDR-II memory) LDO standby regulator provides up to 500mA at 2.5V for DDR-I and at 1.8V for DDR-II systems Can be ganged for higher current applications Over temperature and reverse current protection Over current protection for VSTBY and VTT regulator Available in 8 lead and 14 lead PSOP packages Lead-free versions available Product Description The CM3131 family of all-linear regulators provides an integrated power solution for DDR-I/-II memory systems in both run-time and standby modes of operation. The CM3131 is ideal for designs incorporating both a main 3.3V and a standby (3.3V or 5V) supply. The CM3131 features three independent linear regulators for VDDQ, VTT and VSTBY supply regulation and will maintain an accuracy of 1% across the operating temperature range. The CM3131 is offered in two configurations. The CM3131-01/11 drives a single external N-FET on a single VDDQ rail. The CM3131-02 drives two external unmatched N-FETs on two VDDQ rails. Each VDDQ rail incorporates an adjustment pin (SENSE) to enable setting VDDQ in the 2.2V to 2.8V range, supporting DIMMs with different supply requirements or DDR-II type devices. The CM3131-01/11 is available in 8-lead PSOP package and the CM3131-02 is available in 14-lead PSOP package. The CM3131 devices are also available with optional lead-free finishing. * * * * * * * * * Applications Desktop PCs, notebooks, and workstations Set top boxes, digital TVs, printers Embedded systems Electrical Schematic (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 1 CM3131 PACKAGE / PINOUT DIAGRAM TOP VIEW TOP VIEW NC V DDQ DRIVE VTT VDDQ1 VDDQ2 CM3131-02 SENSE2 DRIVE2 DRIVE1 VSTBY GND SEL V TT CM3131-01/11 GND VSTBY NC SENSE1 VCC EN VCC SENSE SEL/EN PSOP-8 Note: These drawings are not to scale. PSOP-14 PIN DESCRIPTIONS PART NUMBER -01 -11 -02 1 1 13 2 3 4 4 5 6 7 8 5 6 7 8 2 3 14 1 2 3 4 7 5 6 8 9 10 11 12 NAME VDDQ / VDDQ1 VTT NC GND SEL NC EN SENSE / SENSE1 VCC VSTBY DRIVE / DRIVE1 DRIVE2 SENSE2 VDDQ 2 DESCRIPTION VDDQ input for VREF and VDDQ Output in Standby VTT Output for termination resistors No connection Ground Select Input, active low No connection Enable Input, active high Sense Input, Adjusts VDDQ Rail 3.3V Main Input Supply 3.3V or 5V Standby Input Supply Drive Output for VDDQ External n-FET Drive Output for VDDQ External n-FET Sense Input, Adjusts VDDQ Rail VDDQ Input for VREF and VDDQ Output in Standby Ordering Information PART NUMBERING INFORMATION STANDARD FINISH PINS 8 8 14 PACKAGE PSOP-8 PSOP-8 PSOP-14 ORDERING PART NUMBER1 CM3131-01SB CM3131-11SB CM3131-02SB PART MARKETING CM3131-01SB CM3131-11SB CM3131-02SB LEAD-FREE FINISH ORDERING PART NUMBER1 CM3131-01SH CM3131-11SH CM3131-02SH PART MARKING CM3131-01SH CM3131-11SH CM3131-02SH Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 2 CM3131 Functional Description The CM3131-01 / -11 and CM3131-02 provide power for DDR-I/DDR-II memories from three voltage regulators on-chip with either one or two external N-FETs respectively. There is an overtemperature thermal shutdown if any of the regulators overheat. Each regulator has reverse current protection in the event of any being shut down. The linear regulator-driver/s with external N-FET/s can provide up to 15A at 2.5V/1.8V for the VDDQ of DDR-I/-II memory, from an input supply voltage of 2.8V-3.6V. An external feedback resistor divider, connected to the SENSE1 pin, enables selection of VDDQ output voltages from 2.2V to 2.8V for use with DDR-I memories requiring other than 2.5V for VDDQ. VDDQ = 1.25V x (R1+R2)/R2. When SENSE1 is connected to GND or left open, VDDQ is fixed at 2.50V (and VTT at 1.25V). For DDR-II operation, VDDQ can be set from 1.7V to 1.9V. The VTT regulator is a linear source-sink regulator powered from the VDDQ output that supplies the VTT supply required by DDR-I memory termination resistors. This regulator sinks or sources up to 2A at 2.8V / 3.0V / 3.3V for DDR-I, 2.2V /2.5V / 3.3V for DDR-II VCC PSOP-8 CM3131-01/11 1.25V to or from the DDR-I bus termination resistors. For DDR-II applications, the regulator sinks or sources 0.65A at 0.9V. The VTT output voltage accurately tracks VDDQ/2 to 1%. When there is no VCC provided, VTT is powered down and its output is 0V. This regulator has overload current limiting of 2.5A. The standby regulator is a LDO regulator that is powered from a standby voltage, VSTBY, of 3.3V or 5V, and supplies a regulated output of up to 500mA to the VDDQ of the DDR memory to enable it to retain its contents during the standby mode. It provides 2.5V for DDR-I and 1.8V for DDR-II. The CM3131-01 and CM3131-11 differ with regards the selection of truth table for determining which S0S5 sequencing matrix the chip is set for. The CM3131-02 has both EN and SEL pins to more accurately define each Sx stage without monitoring the VCC or VSTBY voltages. Two CM3131s can be ganged together to provide VDDQ power to dual channels of DDR memory, and the memory controller chip of any chip set. VDDQ LDO Drive DRIVE Internal VSBY voltage doubler ensures VG > 5.3V Drives any N-FET with CGS <1200pF FET 2.8V / 3.0V / 3.3V for DDR-I, 2.2V /2.5V / 3.3V for DDR-II VCC CM3131-02 DRIVE1 VDDQ LDO Drives DRIVE2 5VSTBY / 3.3VSTBY VDDQ1 VDDQ LDOs VDDQ / VTT Control VDDQ CSBY CCC Linear Source-Sink VTT Reg GND VDDQ2 N-FET1 N-FET2 5VSTBY / 3.3VSTBY VDDQ LDO VDDQ / VTT Control VDDQ VDDQ R1 VDDQ VDDQ1 VDDQ2 R1 R3 CDDQ2 R4 GND SEL / EN SEL SENSE R2 GND VTT CTT CDDQ CSBY CCC Linear Source-Sink VTT Reg GND VTT Only needed for DDR-I if VDDQ is not 2.5V, e.g. 2.6V or 2.7V. Set to 1.7V to 1.9V for DDR-II SENSE1 SENSE2 R2 EN CDDQ1 VTT CTT VTT Examples of Single and Dual N-FET Drive Configurations (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 3 CM3131 Functional Description (cont'd) VCC 3V/3.3V X S to R S0 S1 S2 S3 S4 S5 VCC 3V/3.3V 3V/3.3V 3V/3.3V 3V/3.3V SEL ON ON ON OFF OFF OFF VDDQ OUT VDDQ VDDQ VDDQ VDDQ STBY 0V 0V VTT OUT VDDQ / 2 VDDQ / 2 VDDQ / 2 0V 0V 0V Sequencing Matrix for CM3131-01 for Suspend to RAM operation No S to R S0 S1 S2 S3 S4 S5 VCC 3V/3.3V 3V/3.3V 3V/3.3V SEL ON ON ON ON ON ON VDDQ OUT VDDQ VDDQ VDDQ 0V 0V 0V VTT OUT VDDQ / 2 VDDQ / 2 VDDQ / 2 0V 0V 0V Sequencing Matrix for CM3131-01 for Suspend to RAM Not Supported VCC 3V/3.3V Truth Table for CM3131-11 (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 4 CM3131 Functional Description (cont'd) S to R S0 S1 S2 S3 S4 S5 VCC 3V/3.3V 3V/3.3V 3V/3.3V VCC 3V/3.3V EN ON ON ON ON OFF VDDQ OUT VTT OUT VDDQ VDDQ STBY 0V 0V 0V VDDQ / 2 0V 0V 0V 0V Truth Table for CM3131-02 Table 3 S0 S1 S2 S3 S4 S5 VCC 3V/3.3V 3V/3.3V 3V/3.3V SEL ON ON ON OFF ON ON EN ON ON ON ON OFF OFF VDDQ OUT VTT OUT VDDQ VDDQ VDDQ VDDQ STBY 0V 0V VDDQ / 2 VDDQ / 2 VDDQ / 2 0V 0V 0V Sequencing Matrix for CM3131-02 for Suspend to RAM operation (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 5 CM3131 Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER ESD (Human Body Model) VCC, VSTBY, DRIVEx SEL, SENSEx VDDQX, VTT Operating Temperature Range Ambient Junction Storage Temperature Range RATING 2000 (GND - 0.6) to (+6.5) (GND - 0.6) to (VCC + 0.6) (GND - 0.6) to (VCC + 0.6) 0 to +70 0 to +125 -40 to +150 UNITS V V V V C C C STANDARD OPERATING CONDITIONS PARAMETER Temperature Range (Ambient) 1. VDDQ Regulator-Driver Supply Voltage VCC Load Current CCC, CDDQ 2. VTT Regulator Supply Voltage VDDQ Load Current CTT 3, VSTBY Regulator Supply Voltage VSTBY Load Current 3.0 to 5.5 0 to 500 V mA 1.8 or 2.5 0 to +/- 0.9 or +/- 2.0 220 V A F 2.8 to 3.6 0 to 15 4.7, 220 V A F RATING 0 to +70 UNITS C (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 6 CM3131 Specifications (cont'd) ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1) SYMBOL PARAMETER CONDITIONS MIN TYP General Parameters TOVER Shutdown Junction 150 Temperature VDDQ Regulator/Driver Parameters (with FDP6030L or similar MOSFET as an external transistor) VCC MIN Input Voltage VDDQ = 2.5V, IDDQ = 6A, 2.80 each channel, SENSE = 0V VDDQ Output Voltage Range IDDQ = 2.5A, VCC = 3.3V, 2.45 2.50 SENSE = 0V VDRIVE H 5 DRIVE High Output VSTBY = 5V, VCC = 3.3V 9.50 Voltage VDRIVE H 3 DRIVE High Output VSTBY = 3.3V, VCC = 3.3V 6.1 Voltage CLOAD External FET Gate VSTBY = 5V, VCC = 3.3V 1200 Capacitance 2.5 tRISE DRIVE Voltage Rise VSTBY = 5V, VCC = 3.3V, Time CLOAD = 1200pF VDDQ LOAD Load Regulation @ VCC = 3.3V, IDDQ = 0.1A to 6A -1.0 each channel 25C VDDQ LINE Line Regulation @ 25C IDDQ = 2.5A, VCC = 2.8V to 3.6V VDDQ = 2.50V, ITT = 0A ITT = 0.1A to 2A, VDDQ = 2.5V ITT = 0A, VCC = 2.8V to 3.6V VTT < 1V -1.0 MAX UNITS C V 2.55 V V V pF ms 1.0 1.0 % % VTT Regulator Parameters VTT Output Voltage Range VTT LOAD Load Regulation @ 25C VTT LINE Line Regulation @ 25C ITT LIM Current Limit ITT SC Short Circuit Current Limit VSTBY Regulator Parameters VDDQ STBY Output Voltage Range VDDQSB LD VDDQ SBLN VDROPOUT ISTBY LIM ISTBY SC Load Regulation @ 25C Line Regulation @ 25C Dropout Voltage Overload Current Limit Short Circuit Current Limit 1.20 -1.0 -1.0 2.3 0.6 1.25 - 1.30 1.0 1.0 V % % A A IDDQ =150mA, VSTBY = 5V, SENSE =0V IDDQ = 10mA to 500mA, VSTBY = 5V IDDQ = 150mA, VSTBY = 3.0V to 5.5V IDDQ = 250mA, each channel VDDQ < 1V 2.45 -1.0 -1.0 2.50 250 2.55 1.0 1.0 450 V % % mV mA mA 400 170 Note 1: All parameters specified at TA = 0C to +70C unless otherwise noted. (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 7 CM3131 Specifications (cont'd) ELECTRICAL OPERATING CHARACTERISTICS (Cont'd) SYMBOL PARAMETER All Regulators ICCN Normal Mode VCC Supply Current ISTBYN Normal Mode VSTBY Supply Current ISTBYS Standby Mode VSTBY Supply Current ISTBYQ Shutdown Mode Quiescent Current CONDITIONS Normal mode (S0-S2) (VDDQ1,2=VDDQ ,VTT=VDDQ/2) Normal mode (S0-S2) (VDDQ1,2=VDDQ ,VTT=VDDQ/2) Standby mode (S3) (VDDQ1,2=VDDQSTBY ,VTT=0) Shutdown mode (S4-S5) (VDDQ1,2=0 ,VTT=0) MIN TYP MAX 5 1650 550 70 2450 850 120 UNITS A A A A (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 8 CM3131 Mechanical Details 8-lead PSOP Package Dimensions (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 9 CM3131 Mechanical Details (cont'd) 14-lead PSOP Package Dimensions (c) 2004 California Micro Devices Corp. All rights reserved. 02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 10 |
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